Method for manufacturing a semiconductor device

摘要

A plurality of intermediate layers are formed on a base layer. Each of the intermediate layers include a conductive pad which is formed on both the insulating film of the immediately preceding layer and an interlayer insulating film which is formed on both the conductive pad of the same intermediate layer and the insulating film of the preceding intermediate layer. A plurality of through holes are formed in each of the interlayer insulating films and are filled with conductive material. The conductive pad of each intermediate layer is in electrical contact with the conductive material in the through holes of the top most intermediate layer. An insulating film is formed on both this conductive pad and the insulating film of the top most intermediate layer. A hole is formed in this insulating film which hole is substantially the same size as the conductive pad. A bonding pad is formed on the conductive pad in the through hole.