| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for use in an ultramicro-lithographic process for manufacturing VLSI or a high capacity microchip and in another photofabrication process, and having improved PEB temperature dependency, and to provide a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises two resins each containing a group which is decomposed by the action of an acid to increase solubility in an alkaline developer and a compound which generates an acid upon irradiation with an actinic ray or radiation, wherein each of the two resins includes an alicyclic structure as well as at least one of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from a methacrylic acid derivative monomer and has a weight average molecular weight of ≥4,500, and difference between the weight average molecular weights of the two resins is ≥2,000. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
