| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device wherein a gate leakage current and current collapse are suppressed to a level for satisfying the high characteristic requirement of a commercial level, and to provide a manufacturing method. <P>SOLUTION: The surface of an n-type GaN thin film layer 140 is passivated by providing a source 150, a gate 160, and a drain 170 for bias application onto the n-type GaN thin film layer 140 apart from each other, and by providing a SiN protection film 180 whose hydrogen content is 15% or below to the surface of the n-type GaN thin film layer 140 exposed between the source 150 and the gate 160, and between the gate 160 and the drain 170. Thus, a state change on the surface of the nitride semiconductor and a change in a charging state of the surface defect level caused by the presence of hydrogen in the SiN protection film 180 are suppressed so that the gate leakage current and current collapse can be suppressed to a level for satisfying the high characteristic requirement of the commercial level. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
