GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, ITS MANUFACTURING METHOD, AND LED LAMP

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element that is provided with a mechanically supporting function, such as the substrate and, at the same time, can be improved in luminous efficiency by reducing the absorption of ultraviolet rays having short wavelengths.

SOLUTION: The group III nitride semiconductor light emitting element comprises a laminated structure 11 formed by laminating at least two group III nitride semiconductor layers 104 and 106 having mutually different electric conduction types and a light emitting layer 105 consisting of a group III nitride semiconductor provided in between the layers 104 and 106. The light emitting element has a plate-shaped body 111 which is formed on a surface exposed after a crystalline substrate used for providing the laminated structure 11 is removed and composed of a transparent material to the light radiated from the light emitting layer 105. The light emitting element is constituted so that the light radiated from the light emitting layer 105 may be taken out from the plate-shaped body 111.

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