SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhance d brightness. Semiconductor light-emitting device (1) is furnished with an n- type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) composed of a nitride and provided in between the n-type cladding layer (3) and the p-type cladding layer (7), and therein is characterized in that the angle formed by an axis orthogonal to the interfac e between the n-type cladding layer (3) and the active layer (5), and the c-ax is in the active layer (5), and the angle formed by an axis orthogonal to the interface between the active layer (5) and the p-type cladding layer (7), and the taxi s in the active layer (5), are each greater than zero.