| 发明名称 |
Semiconductor device having gate electrode in which depletion layer can be generated |
| 摘要 |
Performance for a gate insulation film of an insulated gate transistor is enhanced. A depletion layer is generated in a region of a gate electrode 12 which is provided in contact with a gate insulation film 4 in an OFF state, and the depletion layer disappears or a width thereof is reduced in an ON state.
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| 申请公布号 |
US6963100(B2) |
申请公布日期 |
2005.11.08 |
| 申请号 |
US20020232703 |
申请日期 |
2002.09.03 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
KUSUNOKI SHIGERU |
| 分类号 |
H01L21/8247;H01L21/74;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L27/115;H01L29/423;H01L29/49;H01L29/78;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8247 |
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