Magnetic memory device and method of manufacturing the same

摘要

A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first surface and a second surface. The second surface faces the magnetoresistance element and the first surface is opposite to it. The second surface is smaller in width than the first surface.