| 发明名称 |
SILICON BASED SUBSTRATE HAFNIUM OXIDE TOP ENVIRONMENTAL/THERMAL TOP BARRIER LAYER AND METHOD FOR PREPARING |
| 摘要 |
<p>A top barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment and comprises at least 65 mol % hafnium oxide.</p> |
| 申请公布号 |
CA2504264(A1) |
申请公布日期 |
2005.11.13 |
| 申请号 |
CA20052504264 |
申请日期 |
2005.04.14 |
| 申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
BHATIA, TANIA;SUN, ELLEN Y. |
| 分类号 |
B01J19/02;B32B18/00;C04B41/50;C04B41/52;C04B41/87;C04B41/89;C23C4/10;C23C28/00;C23C30/00;F01D5/28;F02C7/00;H01L21/31;H01L21/469;H01L21/8238;H01L21/8242;(IPC1-7):B32B18/00 |
主分类号 |
B01J19/02 |
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