| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a limiter, capable of properly controlling the limiting voltage, and to provide an inexpensive semiconductor device using the limiter, and of enhancing its integrated circuit in mechanical strength, without suppressing the circuit scale. <P>SOLUTION: The limiter is so constituted that a thin-film transistor (TFT) of the stacked gate structure, having a floating gate, is used as a diode. By using the TFT having a floating gate, the TFT threshold voltage Vth is compensated for, by controlling the electric charge accumulated in the floating gate, even if variations are produced in the threshold voltage Vth. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
