LOW TEMPERATURE POLY-SILICON BACKPLANE AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING DEVICE

摘要

Provided are a low temperature poly-silicon (LTPS) backplane and a manufacturing method thereof, and a light-emitting device. The LTPS backplane comprises: a substrate (11), and a thin film transistor (TFT) (12) and a light-blocking layer (13) located above the substrate (11), the light-blocking layer (13) being located above the TFT (12). The light-blocking layer (13) is used to block an incident light from irradiating the TFT (12).