| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the manufacturing yield in the connection process for a semiconductor device by applying a flip chip connection structure capable of suppressing the crack or exfoliation etc. resulting from a low-κ film etc. <P>SOLUTION: This semiconductor device 20 comprises a semiconductor chip 21 having a plurality of first electrode pads 25 and solder bumps 23, and a substrate 22 having a plurality of second electrode pads 28 which are connected to the first electrode pads 25 respectively via the solder bumps 23. When the cross-section through the center of the first electrode pad 25 and the solder bump 23 is seen, the solder bump group has solder bump 23A wherein the stress magnification coefficient K in the notch shape formed by the first electrode pad and the profile of the solder bump 23 on the chip center side is smaller than or equal to that on the chip edge side. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
