| 摘要 |
<P>PROBLEM TO BE SOLVED: To more smoothly diffuse an element driving current to a light emitting layer by reducing the resistance of a conductive layer to a lower one and to improve luminance by allowing the conductive layer to be transparent enough to transmit emitted light from the light emitting layer to the exterior. <P>SOLUTION: The pn junction type compound semiconductor light emitting diode 1A is provided with at least an n-type active (light emitting) layer 2 comprising a III group nitride semiconductor and a III group nitride semiconductor layer 3 containing a p-type dopant provided on the layer 2 on a crystal substrate 1. The device has a band gap exceeding that of the III group nitride semiconductor comprising the layer 2 at a room temperature on the layer 3. A boron phosphide-based III-V group compound semiconductor layer 4 is provided while showing a p-type conductivity in an undoped condition is provided, and an ohmic positive electrode 5 is provided by bonding the diode 1A onto the surface of the layer 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
