发明名称 |
Multilevel copper interconnects with low-k dielectrics and air gaps |
摘要 |
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by electroless, selectively deposited copper in a streamlined process which further reduces both intra-level line to line capacitance and the inter-level capacitance.
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申请公布号 |
US6995470(B2) |
申请公布日期 |
2006.02.07 |
申请号 |
US20040786354 |
申请日期 |
2004.02.25 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L23/48;H01L21/4763;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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