发明名称 |
Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions |
摘要 |
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser beams or the equivalent strong light are radiated onto the impurity regions and on an boundary between the impurity region and an active region adjoining the impurity region.
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申请公布号 |
US6995432(B2) |
申请公布日期 |
2006.02.07 |
申请号 |
US20020301777 |
申请日期 |
2002.11.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO |
分类号 |
H01L21/20;H01L23/62;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L29/04;H01L29/08;H01L29/78;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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