发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device including an MIM capacitor is provided. A first metal wiring layer is patterned together with a first hard mask member and forms a lower capacitor electrode. A second metal wiring layer is formed on the first metal wiring layer with a capacitor insulating film therebetween and is patterned together with a protection layer and a second hard mask member which remains under the first hard mask member. The second metal wiring layer forms a plurality of upper capacitor electrodes. A third metal wiring layer connected with the first or second metal wiring layer is patterned on an insulating film. The third metal wiring layer includes a connection with a plug wiring member provided within a first or second contact hole.
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申请公布号 |
US7005343(B2) |
申请公布日期 |
2006.02.28 |
申请号 |
US20040872192 |
申请日期 |
2004.06.18 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YUSA YOSHINOBU |
分类号 |
H01L21/8242;H01L23/52;H01L21/02;H01L21/033;H01L21/3205;H01L21/3213;H01L21/768;H01L21/822;H01L27/04 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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