| 摘要 |
<P>PROBLEM TO BE SOLVED: To decrease an influence of a light having a wavelength different from that of a pattern light of an EUV exposure to improve an accuracy of a lithography. <P>SOLUTION: A method for forming a resist pattern for trabscribing the pattern formed on a mask to a resist film on a substrate with the use of the EUV photolithography machine comprises the steps of forming the resist film 101 on the substrate 100; forming an auxiliary film 102 on the resist film 101 by the light having the wavelength different from that of the pattern light in the EUV photolithography machine and also having the transmission factor of the light for exposing the resist film 101 lower than that of the pattern exposure light of the EUV photolithography machine; pattern exposing to irradiate the EUV light from the mask to the resist film 101 with the use of the EUV photolithography machine; removing the auxiliary film 102 after the pattern exposure of the resist film 101; and developing the resist film 101 with the use of the developing liquid after the removal of the auxiliary film 102. <P>COPYRIGHT: (C)2008,JPO&INPIT |
