SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

主权项

1. A semiconductor memory device, comprising:
a free magnetic pattern on a substrate; a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern; and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and first non-magnetic patterns which are alternately stacked, wherein the second pinned pattern includes second ferromagnetic patterns and second non-magnetic patterns which are alternately stacked, wherein the second ferromagnetic patterns include the same ferromagnetic material as the first ferromagnetic patterns, and wherein the second non-magnetic patterns include a different non-magnetic material from the first non-magnetic patterns.