发明名称 |
INDENTATION APPROACHES FOR FOIL-BASED METALLIZATION OF SOLAR CELLS |
摘要 |
Indentation approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate. The method also includes locating a metal foil above the alternating N-type and P-type semiconductor regions. The method also includes forming a plurality of indentations through only a portion of the metal foil, the plurality of indentations formed at regions corresponding to locations between the alternating N-type and P-type semiconductor regions. The method also includes, subsequent to forming the plurality of indentations, isolating regions of the remaining metal foil corresponding to the alternating N-type and P-type semiconductor regions. |
申请公布号 |
US2017110619(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201514885820 |
申请日期 |
2015.10.16 |
申请人 |
Sewell Richard Hamilton;Harder Nils-Peter |
发明人 |
Sewell Richard Hamilton;Harder Nils-Peter |
分类号 |
H01L31/18;H01L31/0236;H01L31/0224 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a solar cell, the method comprising:
forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate; locating a metal foil above the alternating N-type and P-type semiconductor regions; forming a plurality of indentations through only a portion of the metal foil, the plurality of indentations formed at regions corresponding to locations between the alternating N-type and P-type semiconductor regions; and subsequent to forming the plurality of indentations, isolating regions of the remaining metal foil corresponding to the alternating N-type and P-type semiconductor regions. |
地址 |
Los Altos CA US |