| 发明名称 |
MEMORY ARRAY OF CELLS CONTAINING BISTABLE SWITCHABLE RESISTORS |
| 摘要 |
A monolithic semiconductor memory array in which the cells comprise a voltage divider circuit formed by a fixed resistor in series with a variable switchable bistable resistor settable to either a high or a low resistance state respectively in response to the application of a pair of electrical potentials of opposite polarities.
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| 申请公布号 |
US3761896(A) |
申请公布日期 |
1973.09.25 |
| 申请号 |
USD3761896 |
申请日期 |
1972.04.18 |
| 申请人 |
IBM,US |
发明人 |
DAVIDSON E,US |
| 分类号 |
G11C11/41;G11C11/39;G11C13/00;H01L21/00;H01L27/07;H01L27/10;H01L27/24;H01L29/86;(IPC1-7):G11C11/34;G11C5/02;G11C7/00 |
主分类号 |
G11C11/41 |
| 代理机构 |
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