| 摘要 |
1334437 Semi-conductor radiation detectors PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 19 April 1971 [26 Jan 1970] 20259/71 Heading H1K Both faces of a PIN nuclear radiation detector are recessed through to the intermediate intrinsic region 3, the recesses 4, 6 being aligned so that when a number of such detectors are stacked the radiation F can pass from detector to detector with minimum non-useful absorption. The intrinsic region 3 may be formed by drifting Li from an N type region 2 diffused into an original P type wafer. The recesses 4, 6, which may be cylindrical or parallelepipedal, are formed by grinding and etching and contacts to the P and N type regions 1, 2 are made on their recessed faces or on their lateral surfaces.
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