发明名称 Electric lead element - having laminar metal-insulator-semiconductor structure
摘要 <p>Electric lead element, esp. suitable for electronically turntable retarding guide, have the form of a laminate; a metal strip is placed on an insulator (SiO2, Si3N4 or Al2O3) positioned on top of a semiconductor, the width of the metal strip is smaller than that of the insulator layer and the semiconductor layer. An electric contact can be formed on the semiconductor. The device is esp. suitable for waves having relatively low phase velocity and damping (frequency range from 100 MHz to a few GHz).</p>
申请公布号 DE2233468(A1) 申请公布日期 1974.01.24
申请号 DE19722233468 申请日期 1972.07.07
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT 发明人 HARTH, WOLFGANG, PROF. DR.;MUELLER, JUERG, DIPL.-ING.
分类号 H01L23/66;H01P3/08;H03H7/34;(IPC1-7):H01P3/08 主分类号 H01L23/66
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