SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME

摘要

A semiconductor composite having a rectifying characteristic is provided by first forming a film of electrically insulating material such as silicon dioxide on a main surface of a semiconductor substrate so as to have a portion of said surface exposed through an opening defined by said insulating material film and then depositing a tin oxide film on at least the open area of the semiconductor substrate. A barrier formed between the substrate and the tin oxide film and exhibiting the said rectifying characteristics is confined and protected by said insulating material film.