| 摘要 |
Method of producing semiconductor devices, comprising providing semiconductor body with a first major surface comprising mutually adjoining surface portions of substantially rectangular configuration; providing different conductivity type regions at various surface portions; providing metal electrode strips at the first major surface, the strips being substantially parallel to imaginary lines diagonally extending across respective surface portions, with strip portions interconnecting a number of the conductivity regions; and then dividing the semiconductor body along the orthogonal boundaries of the surface portions to produce the devices.
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