| 摘要 |
<p>An electroluminescent semiconductor display comprises a plurality of electroluminescent semiconductor devices, which are electrically connected together in a rectangular random access type of beam lead array. Each electroluminescent device includes an N-type gallium phosphide semiconductor base member of one conductivity type having a mesa in which a P-N junction is located. A beam lead array parallel to the x direction contacts the P-type zone through apertures in a light reflecting coating on the plateau surface of each of the mesas, whereas a beam lead array parallel to the y direction contacts each of the N-type base regions in two separate portions thereof, thereby avoiding the need for any leads which are in the path of the emitted light. The shape and conductivity profile of the N-type zones in the base region and the plateau are tailored in order to serve as efficient electrical crossover conductors for the beam leads in the y direction as well as to reduce light absorption.</p> |
