| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate, and a polishing composition which especially enables the high-speed polishing of an InP substrate, and to provide a manufacturing method of the compound semiconductor substrate by use of the polishing composition.SOLUTION: A polishing composition comprises: a fatty acid salt of an alkali metal; colloidal silica; and an oxidizer. The fatty acid salt of the alkali metal has a concentration of 1.7×10-8.6×10mol/kg. |
