发明名称 |
Process for forming a resist mask |
摘要 |
A resist mask formation process in which a first layer of photoresist is applied to a substrate, blanket exposed to react the photoactive material in the resist and postbaked. A second layer of photoresist is then applied, exposed patternwise, and portions of the substrate are uncovered by solvent development of the resist layers.
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申请公布号 |
US3873313(A) |
申请公布日期 |
1975.03.25 |
申请号 |
US19730362637 |
申请日期 |
1973.05.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HORST, RICHARD S.;KAPLAN, LEON H.;MERRITT, DAVID P. |
分类号 |
G03F7/11;H01L21/00;H01L23/29;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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