发明名称 Process for forming a resist mask
摘要 A resist mask formation process in which a first layer of photoresist is applied to a substrate, blanket exposed to react the photoactive material in the resist and postbaked. A second layer of photoresist is then applied, exposed patternwise, and portions of the substrate are uncovered by solvent development of the resist layers.
申请公布号 US3873313(A) 申请公布日期 1975.03.25
申请号 US19730362637 申请日期 1973.05.21
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 HORST, RICHARD S.;KAPLAN, LEON H.;MERRITT, DAVID P.
分类号 G03F7/11;H01L21/00;H01L23/29;(IPC1-7):G03C5/00 主分类号 G03F7/11
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