SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To avoid increase in contact resistance of an ohmic electrode caused by etching, in a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: forming a semiconductor layer; forming an ohmic electrode obtained by laminating a plurality of metal layers, on the semiconductor layer; forming another metal layer mainly formed of other metal of a different kind from a material of the outermost layer in the plurality of metal layers, on the ohmic electrode; removing the other metal layer from an upper part of the ohmic electrode by etching; and performing heat treatment to the ohmic electrode after etching.SELECTED DRAWING: Figure 3