| 发明名称 |
Method for fabrication of lateral transistor |
| 摘要 |
A method for fabrication of a lateral transistor is disclosed, which comprises the step of diffusing base impurity by means of the RED method from the same masking hole determining an emitter region on a substrate which includes the emitter region and a collector region on the crystalline main plane thereof.
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| 申请公布号 |
US3880675(A) |
申请公布日期 |
1975.04.29 |
| 申请号 |
US19720289777 |
申请日期 |
1972.09.18 |
| 申请人 |
AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY |
发明人 |
TARUI, YASUO;KOMIYA, YOSHIO;TESHIMA, HIROO |
| 分类号 |
H01L21/8224;H01L21/00;H01L21/331;H01L23/29;H01L27/00;H01L27/082;H01L29/00;H01L29/73;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/8224 |
| 代理机构 |
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