发明名称 Method for detecting electromagnetic property of oriented silicon steel
摘要 A method for detecting electromagnetic property of oriented silicon steel, the method comprises: measuring Euler angles of each of crystal grains in a specimen by use of metallographic etch-pit method; calculating orientation deviation angle θi (degree) of the crystal grain; combining area Si (mm2) of the crystal grain and correction coefficient X of element Si (X=0.1˜10 T/degree); correcting on the basis of the magnetic property B0 (saturation magnetic induction, T) of single-crystal material by using these parameters (θi, Si, X), formula for correcting is;B8=-0.015×X×∑n=1i⁢Si⁢θi∑n=1i⁢Si+(B0-0.04)(1)obtaining electromagnetic property B8 of the oriented silicon steel by the above calculations. The present invention can implement detection of electromagnetic property of a specimen under the circumstances that there is no magnetizm measuring device or that magnetizm measuring devices cannot be used due to reasons such as weight and size of the specimen being too small or surface quality of the specimen being poor.
申请公布号 US9460054(B2) 申请公布日期 2016.10.04
申请号 US201113643371 申请日期 2011.04.12
申请人 BAOSHAN IRON & STEEL CO., LTD. 发明人 Wu Meihong;Jin Weizhong;Sun Huande;Yang Guohua;Shen Kanyi;Huang Jie;Li Guobao
分类号 G06F17/13;G01N27/72;G01R33/00 主分类号 G06F17/13
代理机构 Quarles & Brady, LLP 代理人 Quarles & Brady, LLP
主权项 1. A method for detecting an electromagnetic property, B8, of an oriented silicon steel, the oriented silicon steel having a Si percentage content of 2.8˜4.0%, the oriented silicon steel comprising crystal grains, the method comprising: etching an etched pit into each of the crystal grains of the oriented silicon steel; measuring, using a metallographic microscope and the etched pits, Euler angles of each of the crystal grains in the oriented silicon steel; calculating an orientation deviation angle θi of each of the crystal grains using the respective Euler angles of each of the crystal grains; calculating the electromagnetic property, B8, using the following equation:B8=-0.015×X×∑n=1i⁢Si⁢θi∑n=1i⁢Si+(B0-0.04)(1) where Si is an area of each of the crystal grains, X is a correction coefficient of the element silicon, where X ranges from 0.1 T/degree to 10 T/degree and B0 is a magnetic induction property of a single-crystal material.
地址 Shanghai CN