Semiconductor device with external connection bumps

摘要

A semiconductor device includes a main structure, active bumps and dummy bumps which are provided over a surface of the main structure. The active bumps are arranged in first to n-th rows. The active bumps positioned in each row are arrayed in a first direction with a predetermined first pitch. The first to n-th rows of the active bumps are arrayed in a second direction perpendicular to the first direction. For j being any integer from one to n−1, a (j+1)-th row are shifted in the second direction from a j-th row of the active bumps by a second pitch and shifted in the first direction from the j-th row of the active bumps by a predetermined sub-pitch. The dummy bumps are arrayed in the first direction with the first pitch, and the length of each of the dummy bumps in the second direction is longer than the second pitch.

主权项

1. A semiconductor device, comprising:
a main structure including a semiconductor substrate; a plurality of active bumps provided over a surface of the main structure; a plurality of dummy bumps provided over the surface of the main structure; a plurality of active bump protection elements that are integrated in the main structure and respectively provide electrical protections for the active bumps; a plurality of first top metal interconnections that respectively provide electrical connections between the active bump protection elements and the active bumps via a plurality of active bump contacts; a plurality of dummy bump protection elements that are integrated in the main structure and respectively provide electrical protections for the dummy bumps; a plurality of second top metal interconnections that respectively provide electrical connections between the dummy bump protection elements and the dummy bumps via a plurality of dummy bump contacts; and a third top metal interconnection formed on the surface of the main structure and is electrically separated from the first and second top metal interconnections, wherein the active bumps are arranged in first to n-th rows, where n is an integer equal to two or more, wherein the active bumps are arrayed with a first pitch in a first direction that is parallel to the surface of the main structure, wherein the first to n-th rows of the active bumps are arrayed in an ascending order in a second direction parallel to the surface of the main structure and perpendicular to the first direction, wherein, for j being any integer from one to n−1, a (j+1)-th row of the active bumps are shifted in the second direction from a j-th row of the active bumps by a second pitch and shifted in the first direction from the j-th row of the active bumps by a predetermined sub-pitch, wherein the dummy bumps are arrayed in the first direction with the first pitch, wherein the length of each of the dummy bumps in the second direction is longer than the second pitch, and wherein the third top metal interconnection is formed on the surface of the main structure to pass through a region between two adjacent dummy bumps selected from the dummy bumps and is electrically separated from the dummy bumps.