发明名称 |
ESD clamp with a layout-alterable trigger voltage and a holding voltage above the supply voltage |
摘要 |
An ESD device that includes a gate and an n-drain region isolated from the gate and formed at least partially within an n-well region, which in turn is formed at least partially within a deep n-well region. The doping levels of the n-drain region, the n-well region and the deep n-well region are in a descending order. The ESD device has trigger and holding voltages, above the operation voltage of its protected circuit, which are layout-configurable by altering the distance between the n-drain and a side edge of the n-well region. |
申请公布号 |
US9472511(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201414560135 |
申请日期 |
2014.12.04 |
申请人 |
Cypress Semiconductor Corporation |
发明人 |
Lee Sungkwon;Bettman Roger;Dhanraj Sai Prashanth;Ho Dung;Luquette, Jr. Leo F;Gatabi Iman Rezanezhad;Walker Andrew |
分类号 |
H01L23/60;H01L29/78;H01L29/08;H01L29/861;H01L29/739;H01L27/02;H01L29/06;H01L29/10 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
1. A device, comprising:
at least one n-channel metal-oxide-semiconductor (MOS) transistor formed on a lightly doped p-substrate, including: a gate, a heavily doped n-drain region isolated from the gate and formed at least partially within an intermediately doped n-well region, wherein the intermediately doped n-well region is formed at least partially within a lightly doped deep n-well region, the intermediately doped n-well region including at least one vertical side edge and a bottom edge that are in direct contact with the lightly doped deep n-well region, wherein doping levels of the n-drain region, the n-well region and the deep n-well region are in a descending order, and a heavily doped n-source region; and a heavily doped p-collection region spaced apart from the heavily doped n-source region, wherein the heavily doped n-source region and the heavily doped p-collection region are formed at least partially within an intermediately doped p-well region. |
地址 |
San Jose CA US |