Semiconductor structure with inlaid capping layer and method of manufacturing the same

摘要

A method of fabricating a semiconductor structure includes forming a dielectric layer overlaying a substrate; forming a trench in the dielectric layer; forming a first barrier layer lining the trench; forming a conductive layer overlaying the first barrier layer; forming a second barrier layer overlaying the conductive layer; forming a metallic sacrificial layer to cover the second barrier layer and to fill the trench; and performing a polishing process to remove the materials above a bottom portion of the second barrier layer.

主权项

1. A method of fabricating a semiconductor structure, comprising:
forming a dielectric layer overlaying a substrate; forming a trench in the dielectric layer; forming a first barrier layer overlaying the dielectric layer and lining the trench; forming a conductive layer overlaying the first barrier layer; forming a second barrier layer overlaying the conductive layer, wherein the second barrier layer has a bottom portion positioned in the trench; forming a metallic sacrificial layer to cover the second barrier layer and to fill the trench; and performing a polishing process to remove the metallic sacrificial layer, and portions of the second barrier layer, the conductive layer, the first barrier layer and the dielectric layer to expose the bottom portion of the second barrier layer.