Plasma treated semiconductor dichalcogenide materials and devices therefrom

摘要

A plasma-based processing method includes depositing a transition metal dichalcogenide (TMDC) material onto a substrate. The TMDC material is plasma treated in an oxygen containing ambient to oxidize the TMDC material to form oxidized dielectric TMDC material. The oxidized dielectric TMDC material has a higher electrical resistivity as compared an electrical resistivity of the TMDC material before the plasma treating, typically >103 times greater.

主权项

1. A plasma-based processing method, comprising:
depositing a two dimensional (2D) semiconductor transition metal dichalcogenide (TMDC) material on a substrate, and plasma treating said 2D semiconductor TMDC material in an oxygen comprising ambient to oxidize said 2D semiconductor TMDC material to form oxidized dielectric 2D TMDC material, said oxidized dielectric 2D TMDC material having a higher electrical resistivity as compared to said 2D semiconductor TMDC material before said plasma treating, wherein said 2D semiconductor TMDC material has a thickness from 1 to 8 atomic layers, and wherein said plasma treating oxidizes said 2D semiconductor TMDC material to form defect regions throughout all said atomic layers of said 2D semiconductor TMDC material.