| 发明名称 |
REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES |
| 摘要 |
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer. |
| 申请公布号 |
US2016308092(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615193624 |
申请日期 |
2016.06.27 |
| 申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
Grillot Patrick Nolan;Wildeson Isaac Harshman;Nshanian Tigran;Deb Parijat Pramil |
| 分类号 |
H01L33/12;H01L33/32;H01S5/323;H01L27/02;H01L25/16;H01S5/30;H01L33/06;H01L33/00 |
主分类号 |
H01L33/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a III-nitride light emitting layer disposed between an n-type region and a p-type region; and a III-nitride layer doped with an acceptor, wherein then-type region is disposed between the III-nitride layer doped with an acceptor and the light emitting layer, wherein the doping is graded. |
| 地址 |
Eindhoven NL |
