SEMICONDUCTOR DEVICE

摘要

A semiconductor device, including a semiconductor substrate, an active region formed on the semiconductor substrate, and a gate runner disposed to surround the active region. The active region includes a first cell group in which a gate electrode of each cell is directly connected to the gate runner, and a second cell group in which a gate electrode of each cell is connected to the gate runner via a di/dt mitigating element. The di/dt mitigating element is a capacitor, a resistor connected in parallel to a capacitor, or an inverse-parallel-connected diode.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; an active region formed on the semiconductor substrate; and a gate runner disposed to surround the active region, wherein the active region includes
a first cell group in which a gate electrode of each cell is directly connected to the gate runner, anda second cell group in which a gate electrode of each cell is connected to the gate runner via a di/dt mitigating element, the di/dt mitigating element including a capacitor that has
a trench disposed in the semiconductor substrate,an insulating film covering an inner wall of the trench,first and second electrodes disposed in the trench, the insulating film separating the first and second electrodes from the trench, anda dielectric material disposed between the first and second electrodes.