| 发明名称 |
PROCESS OF MANUFACTURING FIN-FET DEVICE |
| 摘要 |
A process of manufacturing a Fin-FET device, and the process includes following steps. An active fin structure and a dummy fin structure are formed from a substrate, and an isolation layer is covered over the active fin structure and the dummy fin structure. Then, the isolation layer above the dummy fin structure is removed, and the dummy fin structure is selectively etched, which a selective ratio of the dummy fin structure to the isolation layer is over 8. |
| 申请公布号 |
US2016308027(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201514688885 |
申请日期 |
2015.04.16 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG Chia-Wei;CHANG An-Shen;LIU Eric Chih-Fang;CHEN Ryan Chia-Jen;LIN Chia-Tai;PENG Chih-Tang |
| 分类号 |
H01L29/66;H01L21/3105;H01L21/3065;H01L21/283;H01L21/306 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process of manufacturing a Fin-FET device, comprising:
forming an active fin structure and a dummy fin structure from a substrate; covering an isolation layer over the active fin structure and the dummy fin structure; removing the isolation layer above the dummy fin structure; and selective etching the dummy fin structure, wherein a selective ratio of the dummy fin structure to the isolation layer is over 8. |
| 地址 |
Hsinchu TW |
