MEMORY CELL COMPRISING NON-SELF-ALIGNED HORIZONTAL AND VERTICAL CONTROL GATES

摘要

The present disclosure relates to a memory cell comprising a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending above the floating gate, wherein the floating gate also extends above a portion of the vertical selection gate over a non-zero overlap distance. Application mainly to the production of a split gate memory cell programmable by hot-electron injection.

主权项

1. A memory cell, comprising:
a vertical selection gate in a trench in a substrate; a floating gate on the substrate, the floating gate having a protuberance which extends below a first surface of the substrate; and a horizontal control gate on the floating gate.