发明名称 |
MONOLAYER FILMS OF SEMICONDUCTING METAL DICHALCOGENIDES, METHODS OF MAKING SAME, AND USES OF SAME |
摘要 |
Metal-chalcogenide films disposed on a substrate comprising at least one monolayer (e.g., 1 to 10 monolayers) of a metal-chalcogenide. The films can be continuous (e.g., structurally and/or electrically continuous) over 80% or greater of the substrate that is covered by the film. The films can be made by methods based on low metal precursor concentration relative to the concentration of chalcogenide precursor. The methods can be carried out at low water concentration. The films can be used in devices (e.g., electrical devices and electronic devices). |
申请公布号 |
US2016308006(A1) |
申请公布日期 |
2016.10.20 |
申请号 |
US201615130407 |
申请日期 |
2016.04.15 |
申请人 |
Cornell University |
发明人 |
Park Jiwoong;Kang Kibum;Xie Saien |
分类号 |
H01L29/24;H01L29/66;H01L21/02;H01L29/786 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
1. A metal-chalcogenide film disposed on a substrate, the film comprising a monolayer of a metal-chalcogenide. |
地址 |
Ithaca NY US |