Memory circuit using two complementary FET's - gate of one transistor also acts as source or drain of second transistor

摘要

The memory circuit uses two FETs connected in series, the source of one transistor connected to the gate of the other, the gate of the first transistor connected to the drain of the second and the drain of the first transistor connected to the source of the second transistor. The two FETs are of complementary type and formed on a common semiconductor substrate (102) one of the FETs having an insulated gate and the gate electrode (112) of this transistor acting simultaneously as the source or drain electrode of the second FET. The latter gate electrode (112) can be on an insulating layer (110) extending above a first channel zone (111) formed in the substrate and the drain electrode (107) of the other transistor is connected to it.