发明名称 Semiconductor contact for optical signal modulation - consists of semiconductor with direct band structure and transparent metal electrodes
摘要 <p>The optical transmission is modulated by an electric signal. The transparent contact is irradiated by a laser light of a suitable wavelength and intensity, and the photo-luminescence intensity of the SC material is modulated by application of an alternating voltage to the contact biased in the blocking sense. The semiconductor has an np+ or a pn+ heterocontact consisting of a lightly doped SC material with direct band structure, and of a highly doped SC material with wider band spacing. The lighter doped component may include gallium arsenide.</p>
申请公布号 DE2453897(A1) 申请公布日期 1976.05.20
申请号 DE19742453897 申请日期 1974.11.13
申请人 SIEMENS AG 发明人 LANGMANN,ULRICH,DR.
分类号 G02F1/015;(IPC1-7):02F1/00;01S3/10 主分类号 G02F1/015
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