Naphthoquinone-diazide-type positive photoresist development - with aq alkali soln contg 1H-1,2,3-benzotriazole in real time recording

摘要

In the development of a positive photoresist, esp. of the alpha-naphthoquinone-diazide type, by treatment with an aq. alkali developer soln., so that the exposed areas only dissolve, 0.1-1.0, pref. 0.3 (wt.)% IH-1,2,3-benzotriazole (I) is added to the developer liquid. The developer pref. is an aq. soln. contg. 5% Na3PO4, 10 pts. MeO.CH2CH2OH and 0.2% (I). For recording information of large band width in the MHz region with high memory density, e.g. television pictures from discs, using laser beams. The photoresist is developed completely, even in the areas subjected to low intensity radiation, even as little as 1/5th of the normal exposure (esp. brief exposure with the 257.25 nm UV radiation obtd. by frequency doubling of the green wavelength, 514.5 nm, of an Ar ion laser), so that it is suitable for real time requirements.