| 摘要 |
In an integrated circuit which includes an element which is subject to destructive breakdown upon the application thereto of a high voltage, means including a semiconductor current limiting resistor bounded by a PN junction is formed in the device and coupled between a conductor and the circuit element. One end of the current limiting resistor is coupled to the conductor and has a configuration such that a distributed resistance is included within the resistor between the conductor and the PN junction boundary of the resistor, to protect the PN junction bounding the resistor.
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