| 摘要 |
An integrated attenuation element having a variable attenuation characteristic for high frequency signals comprises a semiconductor body of one conductivity type having at least three zones of the opposite conductivity type arranged in one face thereof. One of the zones serves as an input for high frequency signals and another of the zones serves as an output, while the third zone serves as a control electrode. An attenuation circuit which employs such an element includes means for applying control signals to the zones to control the attenuation of the element. |
