发明名称 DISPOSITIF HYPERFREQUENCE A SEMICONDUCTEUR, DU TYPE UTILISANT LE TEMPS DE TRANSIT, ET APPAREILS GENERATEURS OU AMPLIFICATEURS UTILISANT CE DISPOSITIF
摘要 A microwave oscillator using a transit-time transistor structure with a space charge zone, is provided. The negative resistance introduced by the transit-time in the space charge zone is utilized in a circuit connected with emitter and collector, the base being direct-biased and not passing the high frequency. To avoid a short-circuiting by the parasitic base-collector capacitance, a transmission line is connected in parallel across the base and collector terminals. The input impedance of this line is adjusted by short-circuiting this line at a distance close to a quarter of wavelength, thus creating an input inductance able to compensate the effect of the base-collector capacitance.
申请公布号 FR2305857(A1) 申请公布日期 1976.10.22
申请号 FR19750009920 申请日期 1975.03.28
申请人 THOMSON CSF 发明人 MARC ARMAND
分类号 H01L23/66;H03B9/12;H03F3/60 主分类号 H01L23/66
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