| 发明名称 |
MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE:To prevent occurrence of the undercut phenomenon in the windowmaking process for manufacturing bipolar transistor by using no multistructure masking material composed of the dioxide silicon film and nitride film.</p> |
| 申请公布号 |
JPS51127682(A) |
申请公布日期 |
1976.11.06 |
| 申请号 |
JP19750051521 |
申请日期 |
1975.04.30 |
| 申请人 |
FUJITSU LTD |
发明人 |
INAYOSHI KATSUYUKI;KADOMA YOSHINOBU |
| 分类号 |
H01L29/73;H01L21/00;H01L21/225;H01L21/28;H01L21/285;H01L21/316;H01L21/331;H01L21/768;H01L21/8222 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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