| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:In the CMOS, by confining the operation of the parasitic bipolar Tr, the occurrence of the abnormal current due to the operation of a thyristor circuit constituted parasitically shall be prevented. |
| 申请公布号 |
JPS5211876(A) |
申请公布日期 |
1977.01.29 |
| 申请号 |
JP19750088066 |
申请日期 |
1975.07.18 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
SATOU KAZUO;UENO SABUHIRO |
| 分类号 |
H01L27/08;H01L27/092;H01L29/78 |
主分类号 |
H01L27/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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