Determination of thermal impedances of bonding layers in infrared photoconductors

摘要

A method of determining thermal constants of bonding layers of an infrared sensor which comprises cooling a bonded layer sensor to 77 DEG K and then heating the sensor by a quick pulse of heat. The electrical resistance of the sensor is measured and the measurement continued to determine a thermal profile. The measured thermal profile is compared with a known profile to determine thickness of the bonding layers and the material layers.