Pure semiconductor material sepn. from carrier gas - by deposition on boards of semiconductor shaped as a box

摘要

Sepn. of a highly pure semiconductor material by thermal dissociation of gaseous-combinations of the materials, and deposition on supporting bodies of the same semiconductor material is claimed. The supports are in the form of boards pref. 1-5 mm thick, 30-100 mm wide and 500-1000 mm long, and have >=1 end slot, the width of which corresponds to the thickness of the boards, by means of which the boards can be formed into boxes serving as sepn. and deposition chambers. The semiconductor material is deposited in much greater yield using the walls of the chamber as supports with much less loss.