发明名称 |
METHOD FOR FORMING SILICON CONDUCTIVE LAYERS |
摘要 |
<p>A method for forming contoured electrodes of polycrystalline silicon by grading the concentration of dopant diffused into the silicon layers during the deposition process. Upon etching the silicon after deposition to form electrodes, e.g., the gate electrode of a field effect transistor, the electrode is desirably tapered. Conductive and insulator layers subsequently deposited atop the tapered electrode are less subject to cracking and lifting off than standard electrodes.</p> |
申请公布号 |
CA1009768(A) |
申请公布日期 |
1977.05.03 |
申请号 |
CA19740201572 |
申请日期 |
1974.06.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAPPELOW, RONALD E.;DONEY, DONALD A.;DOULIN, JOSEPH;LIN, PAUL T.;SCHIAVONE, FRANK A. |
分类号 |
H01L29/78;H01L21/00;H01L21/28;H01L21/306;H01L21/3205;H01L21/3213;H01L21/336;H01L29/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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