| 摘要 |
An LED array with improved radiation intensity and distribution characteristics. A plurality of P-type regions are formed in an N-type substrate by growing an adherent dielectric layer onto the substrate, exposing a plurality of diffusion sites by selectively etching the dielectric layer and diffusing a dopant into the substrate at the diffusion sites until adjacent P-regions are joined by the process of lateral diffusion. The diffusion rate is controlled so that the interconnecting P-regions are extremely thin. These regions exhibit low photon absorption without the usual adverse surface effects formed in thin layers. The surface dielectric has a dielectric constant matched to that of the underlying LED material to optimize radiation transmission across their mutual boundary. The P-regions are geometrically arranged to provide improved radiation distribution at angles near the normal to the surface.
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